Selective re-programming of analog memory cells

Apparatus for data storage, comprising:

• a memory, which comprises multiple analog memory cells;
• and
• circuitry, which is configured to define an erased state, a set of non-erased programming states and a partial subset of the non-erased programming states, to initially store data in a first group of the analog memory cells by programming each of at least some of the memory cells in the first group from the erased state to a respective non-erased programming state selected from the set of non-erased programming states, to program a second group of the analog memory cells, which potentially cause interference to the first group, after initially storing the data, and, after programming the second group, to selectively re-program the first group with the data by repeating programming of only the memory cells in the first group whose respective programming states belong to the partial subset.

Apparatus for data storage, comprising:

• an interface, which is configured to communicate with a memory that includes multiple analog memory cells;
• and
• circuitry, which is configured to define an erased state, a set of non-erased programming states and a partial subset of the non-erased programming states, to initially store data in a first group of the analog memory cells by programming each of at least some of the memory cells in the first group from the erased state to a respective non-erased programming state selected from the set of non-erased programming states, to program a second group of the analog memory cells, which potentially cause interference to the first group, after initially storing the data, and, after programming the second group, to selectively re-program the first group with the data by repeating programming of only the memory cells in the first group whose respective programming states belong to the partial subset.