Nonvolatile memory device

A nonvolatile memory device, comprising:

• a memory unit including
• a magnetic memory element including a stacked body, the stacked body including
• a first ferromagnetic layer having a fixed direction of magnetization;
• a second ferromagnetic layer having a changeable direction of magnetization;
• and
• a first nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer,
• the first ferromagnetic layer, the second ferromagnetic layer, and the first nonmagnetic layer being stacked in a stacking direction, and
• a magnetic field application unit configured to apply a magnetic field to the second ferromagnetic layer,
• the magnetic field having a component in a first in-plane direction perpendicular to the stacking direction;
• and
• a control unit electrically connected to the magnetic memory element,
• the control unit being configured to implement a setting operation of changing a voltage between the first ferromagnetic layer and the second ferromagnetic layer of the magnetic memory element from a first set voltage to a second set voltage,
• the magnetic field applied by the magnetic field application unit satisfying the condition of
• Δ
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• ⁢
• H
• >
• (
• H
• u
• +
• H
• dx
• )
• ⁢
• (
• H
• u
• +
• H
• dx
• -
• H
• ext
• )
• (
• H
• u
• +
• H
• dx
• +
• H
• ext
• )
• [
• Formula
• ⁢
• ⁢
• 1
• ]
• where
• a change of a stacking-direction component of an anisotropic magnetic field of the second ferromagnetic layer when changing from the first set voltage to the second set voltage is ΔH (oersteds),
• the stacking-direction component of the anisotropic magnetic field of the second ferromagnetic layer at the first set voltage is Hu (oersteds),
• the first in-plane-direction component of the magnetic field applied by the magnetic field application unit is Hext (oersteds), and
• a component in the first in-plane direction of the anisotropic magnetic field of the second ferromagnetic layer at the first set voltage is Hdx (oersteds).