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US 8,787,076 B2Granted
Magnetic memory and method of manufacturing the same
AssigneeNEC Corporation
InventorsShunsuke Fukami, Nobuyuki Ishiwata, Tetsuhiro Suzuki, Kiyokazu Nagahara, Norikazu Ohshima
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Abstract
A magnetic memory according to the present invention has: a first underlayer; a second underlayer so formed on the first underlayer as to be in contact with the first underlayer; and a data storage layer so formed on the second underlayer as to be in contact with the second underlayer. The data storage layer is made of a ferromagnetic material having perpendicular magnetic anisotropy. A magnetization state of the data storage layer is changed by current driven domain wall motion.
Claims11
A magnetic memory comprising:
- a first underlayer;
- a second underlayer formed on said first underlayer so as to be in contact with said first underlayer;
- and
- a data storage layer formed on said second underlayer so as to be in contact with said second underlayer,
- wherein said data storage layer is a Co/Ni laminated film having perpendicular magnetic anisotropy and has an fcc(111) orientation crystal structure, and
- a magnetization state of said data storage layer is changed by current driven domain wall motion.
3 more elements
Dependencies are inferred from the claim text.