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US 8,787,072 B2Granted
Floating-body/gate DRAM cell
AssigneeUniversity of Florida Research Foundation, Inc.
InventorsJerry G. Fossum, Zhichao Lu
Life of this patent
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Abstract
Memory cell structures and biasing schemes are provided. Certain embodiments pertain to a modified floating-body gate cell, which can provide improved retention times. In one embodiment, a gated diode is used to drive the gate of a second transistor structure of a cell. In another embodiment, a body-tied-source (BTS) field effect transistor is used to drive the gate of the second transistor structure of a cell.
Claims4
A dynamic memory comprising:
- a first transistor structure having a first gate, a first drain connected to a first bit line, a first source, and a first body, wherein the first source is tied to the first body;
- and
- a second transistor structure having a second gate coupled to the first body that is tied to the first source, a second source connected to a ground, and a second drain connected to a second bit line.
A dynamic memory cell, comprising:
- a first gate electrode on a gate insulating layer on a p-type region of a substrate, the first gate electrode being connected to a word line;
- a first n+ drain region at one side of the p-type region in the substrate, the first n+ drain region being connected to a first bit line;
- a first n+ source region in the substrate at an opposite side of the p-type region from the first n+ drain region;
- a p+ region extending from the p-type region at the opposite side of the p-type region adjacent the first n+ source region, the p+ region providing a contact region for electrical connection to the p-type region;
- a second gate electrode on a second gate insulating layer, wherein the n+ source region and the p+ region are tied together and connected to the second gate electrode;
- a second n+ drain region at a side of the gate electrode, the second n+ drain region being connected to a second bit line;
- and
- a second n+ source region at another side of the gate electrode, the second n+ source region being connected to a ground.
5 more elements
Dependencies are inferred from the claim text.