Write and erase scheme for resistive memory device
AssigneeCrossbar, Inc.
InventorsHagop Nazarian, Sung Hyun Jo
Life of this patent
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Abstract
A method for programming a two terminal resistive memory device, the method includes applying a bias voltage to a first electrode of a resistive memory cell of the device; measuring a current flowing through the cell; and stopping the applying of the bias voltage if the measured current is equal to or greater than a predetermined value.
Claims19
A method for programming a two terminal resistive memory device, the method comprising:
- applying a bias voltage to a first electrode of a resistive memory cell of the device;
- measuring a current flowing through the cell by detecting a rate of a current change with respect to a change in the bias voltage across;
- and
- initiating a termination process to stop applying of the bias voltage after the rate of the current change with respect to the change in the bias voltage is equal to or greater than a predetermined value.
A method for programming a two terminal resistive memory device including a top electrode, a switching element, and a bottom electrode comprising:
- initiating formation of a conductive filament within the switching element by initiating application of a bias voltage to the first electrode of the resistive memory cell of the device to thereby begin forming the conductive filament within the switching element;
- while initiating the formation of the conductive filament within the switching element, measuring a current flowing through the resistive memory cell by detecting a rate of a current change with respect to a voltage change;
- and
- terminating the formation of the conductive filament within the switching element by terminating the application of the bias voltage after the rate of the current change with respect to voltage change is equal to or greater than a predetermined value.
A circuit for programming a two terminal resistive memory device, the circuit comprising:
- means for applying a bias voltage to a first electrode of a resistive memory cell of the device;
- means for measuring a current flowing through the cell by detecting a rate of a current change with respect to a voltage change;
- and
- means for initiating a termination process to stop applying of the bias voltage after the rate of the current change with respect to the voltage change is equal to or greater than a predetermined value.
Dependencies are inferred from the claim text.