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US 8,787,066 B2Granted
Method for forming resistive switching memory elements with improved switching behavior
AssigneesIntermolecular, Inc., Kabushiki Kaisha Toshiba, SanDisk 3D LLC
InventorsYun Wang, Tony Chiang, Imran Hashim, Vidyut Gopal
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Abstract
Methods for producing RRAM resistive switching elements having optimal switching behavior include crystalline phase structural changes. Structural changes indicative of optimal switching behavior include hafnium oxide phases in an interfacial region between a resistive switching layer and an electrode.
Claims20
A method of operating a resistive-switching memory cell, the method comprising:
- providing the resistive-switching memory cell, wherein the cell comprises a first metal oxide layer between a first electrode and a second electrode;
- applying an electrical field to the first metal oxide layer by applying a switching voltage between the first electrode and the second electrode;
- wherein the electrical field changes a resistance state of the resistive-switching memory cell by changing at least one structural property of a region of the first metal oxide layer;
- and
- wherein the at least one structural property comprises at least one of crystallinity, crystal phase, silicide content, or molecular structure.
2 more elements
Dependencies are inferred from the claim text.