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US 8,787,062 B2Granted
Pinning magnetic domain walls in a magnetic domain shift register memory device
AssigneeInternational Business Machines Corporation
InventorsAnthony J. Annunziata, Michael C. Gaidis
Life of this patent
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Abstract
A magnetic domain wall shift register memory device includes a nanowire, a plurality of pinning sites disposed along the nanowire and a control line arranged substantially parallel to the nanowire and configured to support a current.
Claims16
A magnetic domain wall shift register memory device, comprising:
- a nanowire;
- a plurality of pinning sites disposed along the nanowire;
- a control line arranged substantially parallel and non-collinear to the nanowire and configured to support a current;
- and
- a plurality of magnetized pinning structures disposed along the control line.
2 more elements
A magnetic domain wall shift register memory device, comprising:
- a nanowire;
- a plurality of pinning sites disposed along the nanowire;
- a plurality of control wire loops disposed substantially parallel and non-collinear to the nanowire and configured to support a current;
- and
- a plurality of magnetized pinning structures disposed in a respective control wire loop of the plurality of control wire loops.
2 more elements
Dependencies are inferred from the claim text.