Illumination energy management in surface inspection

A method of managing illumination energy applied to a surface of a wafer, comprising:

• receiving a wafer;
• rotating the wafer at a selected spin frequency;
• illuminating a first portion of the wafer with illumination having a first energy level, wherein the first energy level is at least partially based upon the selected spin frequency and at least partially based upon a radial distance of the first portion of the wafer from the center of the wafer;
• and
• illuminating a second portion of the wafer with illumination having a second energy level, wherein the second energy level is at least partially based upon the selected spin frequency and at least partially based upon a radial distance of the second portion of the wafer from the center of the wafer.

A method of managing illumination energy applied to a surface of a wafer, comprising:

• receiving a wafer;
• rotating the wafer at a selected spin frequency;
• illuminating a first portion of the wafer with illumination having a first energy level determined utilizing a first radial distance of the first portion of the wafer from the center of the wafer and the selected spin frequency, wherein the first portion of the wafer is less than a selected radial distance from the center of the wafer;
• illuminating a second portion of the wafer with illumination having a second energy level determined utilizing a second radial distance of the second portion of the wafer from the center of the wafer and the selected spin frequency, wherein the second portion of the wafer is less than the selected radial distance from the center of the wafer;
• and
• illuminating a third portion of the wafer with illumination having a third energy level, wherein the third portion of the wafer is greater than the selected radial distance from the center of the wafer.