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US 8,786,381 B2Granted
Transformer structures for a power amplifier (PA)
AssigneeAvago Technologies General IP (Singapore) Pte. Ltd.
InventorEric Kimball
Life of this patent
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Abstract
In one embodiment, the present invention includes a transformer formed on a semiconductor die. Such transformer may have multiple coils, including first and second coils. Each coil may have segments that in turn are formed on a corresponding metal layer of the semiconductor die. The segments of a given coil are coupled to each other, and the first and second coils can be interdigitated with each other.
Claims17
A transformer formed on a semiconductor die, the transformer comprising:
- a first coil comprising first segments each disposed over a corresponding one of a first plurality of metal layers of the semiconductor die, each of the first segments coupled to each other, at least one of the first plurality of metal layers comprising a first metal;
- and
- a second coil comprising second segments each disposed over a corresponding one of a second plurality of metal layers of the semiconductor die, each of the second segments coupled to each other, at least one of the second plurality of metal layers comprising a second metal, which is different from the first metal, wherein the first and second metals cause mismatch between the first and second coils.
An apparatus comprising:
- a N-coil transformer, wherein N is greater than 2, the N-coil transformer including:
- a first coil formed on a first layer of a semiconductor die;
- a second coil formed on a second layer of the semiconductor die;
- and
- a third coil formed on a third layer of the semiconductor die, wherein only
- the third coil is coupled to a tuning capacitance to tune an inductance of the third coil to the first and second coils, and each of the first, second and third coils are coupled to each of the other coils with a non-zero coupling coefficient.
3 more elements
Dependencies are inferred from the claim text.