GaN HEMT power transistor pulse leveling circuit

An apparatus comprising:

• means for generating (i) an output signal and (ii) a first intermediate signal, in response to (i) an input signal and (ii) a control signal;
• means for generating a second intermediate signal in response to said first intermediate signal;
• means for generating a third intermediate signal in response to the second intermediate signal;
• and
• means for generating said control signal using an RC delay circuit in response to the third intermediate signal, wherein said apparatus generates said output signal having a flattened response by providing pulse shaping in response to said control signal.

A method for leveling pulses in a signal generated by a GaN HEMT power transistor, comprising the steps of:

• (A) generating (i) an output signal and (ii) a first intermediate signal, in response to (i) an input signal and (ii) a control signal;
• (B) generating a second intermediate signal in response to said first intermediate signal;
• (C) generating a third intermediate signal in response to the second intermediate signal;
• and
• (D) generating said control signal in response to the third intermediate signal using an RC delay circuit, wherein said method generates said output signal having a flattened response by providing pulse shaping in response to said control signal.