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US 8,786,106 B2Granted
Semiconductor device and method for manufacturing semiconductor device
AssigneeRohm Co., Ltd.
InventorsOsamu Miyata, Masaki Kasai, Shingo Higuchi
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Abstract
An inventive semiconductor device includes a semiconductor chip having a passivation film, and a sealing resin layer provided over the passivation film for sealing a front side of the semiconductor chip. The sealing resin layer extends to a side surface of the passivation film to cover the side surface.
Claims11
A semiconductor device comprising;
- a semiconductor chip having a passivation film on part of a front surface thereof which is a functional surface;
- a stress relieving layer having an upper surface and a side surface provided on the passivation film;
- a sealing resin layer provided on the stress relieving layer for sealing the front surface of the semiconductor chip, the sealing resin layer extending to a side surface of the stress relieving layer;
- and
- a rewiring provided on the upper surface of the stress relieving layer, the rewiring having a side surface positioned inside of the stress relieving layer such that the upper surface of the stress relieving layer is partly exposed;
- wherein the sealing resin layer is in direct contact with the semiconductor chip without the passivation film and in contact with the upper surface of the stress relieving layer, and
- the sealing resin layer entirely covers the stress relieving layer, the passivation film and the rewiring.
4 more elements
Dependencies are inferred from the claim text.