Three-dimensional multichip module
AssigneeInfineon Technologies AG
InventorHans-Joachim Barth
Life of this patent
Estimating the term…
Abstract
A three-dimensional multichip module includes a first integrated circuit chip having at least one first high-temperature functional area and one first low-temperature functional area, and at least one second integrated circuit chip having a second high-temperature functional area and a second low-temperature functional area. The second high-temperature functional area is arranged opposite the first low-temperature functional area. As an alternative, at least one low-temperature chip having only one low-temperature functional area can also be arranged between the first and second chips.
Claims20
A three-dimensional multichip module comprising:
- a first integrated circuit chip having a first high-temperature functional area with high emission of heat and a first low-temperature functional area with low emission of heat;
- a second integrated circuit chip having a second high-temperature functional area with high emission of heat and a second low-temperature functional area with low emission of heat, the first and second integrated circuit chips being electrically connected to one another and being arranged opposite one another with regard to their main surfaces;
- and
- a third integrated circuit chip having a third low-temperature functional area with low emission of heat and no high temperature area with high emission of heat, the third integrated circuit chip disposed between the first integrated circuit chip and the second integrated circuit chip,
- wherein the second high-temperature functional area of the second integrated circuit chip is arranged on a side of the first low-temperature functional area of the first integrated circuit chip, and
- wherein the first high-temperature functional area of the first integrated circuit chip is arranged on a side of the second low-temperature functional area of the second integrated circuit chip.
A three-dimensional multichip module comprising:
- a first integrated circuit chip having a first high-temperature functional area with high emission of heat and a first low-temperature functional area with low emission of heat, the first integrated circuit chip having a first main surface;
- a second integrated circuit chip having a second high-temperature functional area with high emission of heat and a second low-temperature functional area with low emission of heat, the second integrated circuit chip having a first main surface;
- and
- a third integrated circuit chip having a third low-temperature functional area with low emission of heat and no high temperature area with high emission of heat, the third integrated circuit chip having a first main surface and a second main surface,
- wherein the first main surface of the first integrated circuit is directly electrically connected to the first main surface of the third integrated circuit through a first metal or metal alloy bond,
- wherein the first main surface of the second integrated circuit is directly electrically connected to the second main surface of the third integrated circuit through a second metal or metal alloy bond, and
- wherein the first to third integrated circuit chips form a first sidewall and a second sidewall of the three-dimensional multichip module.
A three-dimensional multichip module comprising:
- a first integrated circuit chip having a first high-temperature functional area with high emission of heat and a first low-temperature functional area with low emission of heat;
- a second integrated circuit chip having a second high-temperature functional area with high emission of heat and a second low-temperature functional area with low emission of heat;
- and
- a third integrated circuit chip having a third low-temperature functional area with low emission of heat and no high temperature area with high emission of heat, the first to third integrated circuit chips being electrically connected to each other,
- wherein the first and the second integrated circuit chips form a first sidewall, a second sidewall, a third sidewall and a fourth sidewall of the three-dimensional multichip module, wherein the first high-temperature functional area of the first integrated circuit is located at the first sidewall of the three-dimensional multichip module, and wherein the second high-temperature functional area of the second integrated circuit is located at the second sidewall of the three dimensional multichip module.
Dependencies are inferred from the claim text.