Semiconductor element having conductive vias and semiconductor package having a semiconductor element with conductive vias and method for making the same

A semiconductor package having a semiconductor element, comprising:

• a silicon substrate, having a plurality of through holes, each of the through holes including a conductive via formed therein, wherein the conductive via includes an insulation layer disposed on a side wall of the through hole, defining a first central hole, the first central hole including a conductive metal disposed therein;
• and
• at least one chip, disposed on the semiconductor element, and electrically connected to the conductive vias of the semiconductor element;
• wherein, for at least one of the through holes, a difference between the radius of the through hole and a radius of the first central hole within the through hole is substantially in a range from 5 to 19 μm;
• and
• wherein the conductive metal forms a hollow cylinder structure, the hollow cylinder structure defining a second central hole, and each of the conductive vias further comprises a second insulation layer disposed in the second central hole.

A method for making a semiconductor package having a semiconductor element with conductive vias, comprising:

• (a) providing a carrier;
• (b) disposing a semiconductor element on the carrier, wherein the semiconductor element comprises a silicon substrate and conductive vias, the silicon substrate has a first surface, a second surface and through holes, the through holes penetrate the silicon substrate, the thickness of the silicon substrate is substantially in a range from 75 to 150 μm, the conductive vias penetrate the silicon substrate and each of the conductive vias comprises a first insulation layer and a conductive metal, the first insulation layer is disposed on a side wall of each of the through holes and defines a first central hole, and the conductive metal is disposed in the first central hole;
• wherein, for at least one of the through holes, a difference between the radius of the through hole and a radius of the first central hole within the through hole is substantially in a range from 5 to 19 μm;
• and
• wherein the conductive metal forms a hollow cylinder structure, the hollow cylinder structure defining a second central hole, and each of the conductive vias further comprises a second insulation layer disposed in the second central hole;
• (c) disposing a plurality of chips on the semiconductor element;
• and
• (d) conducting a reflow process.