Semiconductor devices and methods of manufacture thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChung-Min Fu, Wen-Hao Chen, Dian-Hau Chen
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Abstract
Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a semiconductor device includes a workpiece and a plurality of first conductive lines disposed over the workpiece in a metallization layer. A plurality of second conductive lines is disposed over the workpiece in the metallization layer. The plurality of second conductive lines comprises a greater vertical height in a cross-sectional view of the workpiece than a vertical height of the plurality of first conductive lines.
Claims20
A semiconductor device, comprising:
- a workpiece;
- a plurality of first conductive lines disposed over the workpiece in a metallization layer;
- a plurality of second conductive lines disposed over the workpiece in the metallization layer, wherein the plurality of second conductive lines comprise a greater vertical height in a cross-sectional view of the workpiece than a vertical height of the plurality of first conductive lines;
- and
- wherein the plurality of first conductive lines comprise a first horizontal width in the cross-sectional view of the workpiece, wherein the plurality of second conductive lines comprise a second horizontal width in the cross-sectional view of the workpiece, and wherein the second horizontal width is less than the first horizontal width.
A semiconductor device, comprising:
- a workpiece;
- a plurality of first conductive lines disposed over the workpiece in a metallization layer, the plurality of first conductive lines comprising a first vertical height in a cross-sectional view of the workpiece;
- a plurality of second conductive lines disposed over the workpiece in the metallization layer, the plurality of second conductive lines comprising a second vertical height in the cross-sectional view of the workpiece, wherein the second vertical height is greater than the first vertical height;
- and
- wherein the metallization layer comprises a first metallization layer, wherein a portion of the plurality of second conductive lines is disposed in a second metallization layer adjacent the first metallization layer, the second metallization layer being vertically above or vertically below the first metallization layer.
A semiconductor device, comprising:
- a substrate;
- a dielectric layer on a major surface of the substrate;
- a plurality of first conductive lines disposed within the dielectric layer, the plurality of first conductive lines having a first thickness in a direction perpendicular to the major surface;
- a plurality of second conductive lines disposed within the dielectric layer and on a same horizontal plane, relative the major surface, as the plurality of first conductive lines, the plurality of second conductive lines having a second thickness in the direction perpendicular to the major surface, the second thickness being greater than the first thickness;
- and
- wherein the plurality of first conductive lines comprise a first horizontal width in a cross-sectional view of the workpiece, wherein the plurality of second conductive lines comprise a second horizontal width in the cross-sectional view of the workpiece, and wherein the second horizontal width is less than the first horizontal width.
Dependencies are inferred from the claim text.