Manufacturing method of semiconductor device, semiconductor device and electronic apparatus

A semiconductor device comprising:

• a plurality of pixels formed on a substrate, each including a photoelectric conversion element and a driving circuit;
• a readout circuit for reading out signals of the plurality of pixels;
• an electrode pad connected to the readout circuit;
• and
• a passivation film disposed on the readout circuit and the electrode pad, a portion of the passivation film being removed so as to expose a portion of the electrode pad corresponding to a contact area, the electrode pad being configured to be connected to external devices via the contact area,
• wherein, the electrode pad includes:
• a wiring layer formed of an alloy including at least a first metal and a second metal having different standard electrode potentials, and
• a nitride layer formed at least on a surface of the wiring layer in the contact area such that, in the contact area, the surface of the wiring layer is divided into two-dimensional regions including first regions and second regions and the nitride layer includes a first type of nitride in contact with the surface of the wiring layer in the first regions and a second type of nitride in contact with the surface of the wiring layer in the second regions.