Semiconductor device having damascene interconnection structure that prevents void formation between interconnections having transparent dielectric substrate

A semiconductor device comprising:

• a first interconnection which extends in a first direction, the first interconnection, having a first width in a second direction that is substantially perpendicular with the first direction, the first interconnection having an apical surface which extends in the second direction and extends perpendicular to the first direction, and the first interconnection further having a lateral face and an upper surface which extend in the first direction, wherein the apical surface is adjacent to the lateral face;
• a second interconnection which extends in the second direction and on the first interconnection, the second interconnection having a second width in the first direction that is greater than the first width, wherein the apical surface and a portion of the lateral face of the first interconnection are located in a region where the second interconnection is located;
• a contact portion formed between the first interconnection and the second interconnection, the contact portion being in the direct contact with the apical surface, the lateral face and an upper surface of the first interconnection;
• a first insulating film;
• and
• a second insulating film overlaying the first insulating film,
• wherein the first interconnection is formed in the first insulating film, the second interconnection is formed in the second insulating film, and the contact portion is formed in the first and second insulating films.