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US 8,786,086 B2Granted
Semiconductor device including wiring having main portion and extended portion
AssigneeFujitsu Limited
InventorTakashi Suzuki
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Abstract
A semiconductor device includes a semiconductor substrate; an insulating film formed over the semiconductor substrate, there being formed in the insulating film a trench that in a sectional view has a stepped shape; and a wiring formed in the trench, wherein the wiring includes, a main portion with a first thickness; and an extended portion with a second thickness that is thinner than the first thickness and that extends outward from a side of the main portion.
Claims15
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating cap layer formed over the semiconductor substrate;
- an interlayer insulating film formed over the first insulating cap layer including a via and a trench on the via, the trench including a sidewall of a stepped shape over the via;
- a wiring formed in the trench, the wiring being different from the via;
- and
- a second insulating cap layer formed over the interlayer insulating film,
- wherein the wiring over the via includes, a main portion with a first thickness provided over the via;
- and
- an extended portion, provided over the main portion, with a second thickness that is thinner than the first thickness and that extends outward from a side of the main portion,
- a material of the interlayer insulating film is different from a material of the first insulating cap layer and a material of the second insulating cap layer.
7 more elements
Dependencies are inferred from the claim text.