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US 8,786,085 B2Granted
Semiconductor structure and method for making same
AssigneeInfineon Technologies AG
InventorsHans-Joachim Barth, Mathias Vaupel, Rainer Steiner, Werner Robl, Jens Pohl, Joern Plagmann, Gottfried Beer
Life of this patent
Estimating the term…
Abstract
One or more embodiments relate to a semiconductor structure, comprising: a barrier layer overlying a workpiece surface; a seed layer overlying the barrier layer; an inhibitor layer overlying said seed layer, the inhibitor layer having a opening exposing a portion of the seed layer, and a fill layer overlying the exposed portion of the seed layer.
Claims19
A semiconductor structure, comprising:
- a workpiece including a opening
- a barrier layer overlying a bottom and a sidewall surface of said opening;
- a seed layer overlying a bottom and a sidewall surface of said barrier layer;
- an inhibitor layer overlying at least a top surface of said seed layer;
- and
- a fill layer disposed within said opening and overlies at least a bottom surface of said seed layer,
- wherein said inhibitor layer comprises Ta (tantalum).
4 more elements
A semiconductor structure, comprising:
- a workpiece, said workpiece including a opening;
- a barrier layer disposed within said opening;
- a seed layer overlying said barrier layer within said opening;
- an inhibitor layer overlying said seed layer outside said opening, said seed layer having an exposed portion within said opening;
- and
- a fill layer overlying said portion of said seed layer within said opening,
- wherein said inhibitor layer comprises Ta (tantalum).
4 more elements
A semiconductor structure, comprising:
- a workpiece, said workpiece including a opening;
- a barrier layer disposed within said opening;
- a seed layer overlying said barrier layer within said opening;
- an inhibitor layer overlying said seed layer outside said opening, said seed layer having a portion within said opening that is not covered by said inhibitor layer;
- and
- a fill layer overlying said portion of said seed layer within said opening,
- wherein said inhibitor layer comprises Ta (tantalum).
4 more elements
Dependencies are inferred from the claim text.