Method and device for circuit routing by way of under-bump metallization

A semiconductor device, comprising:

• a substrate that contains a plurality of electronic components;
• an interconnect structure disposed over the substrate, the interconnect structure containing a plurality of interconnect layers;
• a passivation layer disposed over the interconnect structure;
• an Under-Bump Metallization (UBM) layer disposed over the passivation layer, the UBM layer containing a UBM pad and a plurality of UBM devices, the UBM devices including at least one of:
• a UBM trace that is electrically coupled to one of the electronic components through the interconnect structure, and a dummy UBM device;
• and
• a solder bump disposed on the UBM pad and electrically coupled to the UBM pad;
• wherein at least a subset of the plurality of the UBM devices have no solder bumps formed thereon.

A semiconductor device, comprising:

• a substrate that contains a plurality of electronic elements;
• a passivation layer disposed over the substrate;
• an Under-Bump Metallization (UBM) layer disposed over the passivation layer, wherein the UBM layer includes a first conductive element and a second conductive element, the first conductive element and the second conductive element having substantially similar material compositions, and wherein the second conductive element includes a metal line that is electrically coupled to at least one of the electronic elements;
• and
• a solder element that is disposed directly on the first conductive element, the solder element being electrically coupled to the first conductive element, and wherein no portion of the solder element is disposed on the second conductive element.