Semiconductor device and method of forming a thermally reinforced semiconductor die

A semiconductor device, comprising:

• a substrate;
• a semiconductor die disposed with a first surface oriented toward the substrate and a recess formed in an interior portion of the semiconductor die extending from a second surface of the semiconductor die opposite the first surface partially through the semiconductor die;
• a thermal interface material (TIM) deposited over the semiconductor die and into the recess such that the TIM in the recess is surrounded by a peripheral portion of the semiconductor die to reduce flow of the TIM away from the semiconductor die;
• and
• a heat spreader disposed over the semiconductor die, contacting the TIM, and connected to the substrate with a region between the second surface of the semiconductor die and the heat spreader being devoid of the TIM.

A semiconductor device, comprising:

• a substrate;
• a semiconductor die disposed over the substrate including a first surface oriented toward the substrate;
• a thermal interface material (TIM) deposited over a second surface of the semiconductor die opposite the first surface and into a recess of the semiconductor die;
• and
• a heat spreader disposed over the semiconductor die, contacting the TIM, and connected to the substrate with a peripheral portion of the semiconductor die and the recess restricting movement of the TIM from an interface between the second surface of the semiconductor die and heat spreader.

A semiconductor device, comprising:

• a semiconductor die;
• a thermal interface material (TIM) deposited into a recess of the semiconductor die;
• and
• a heat spreader disposed over the semiconductor die contacting the TIM with the recess restricting movement of the TIM from an interface between the semiconductor die and heat spreader.