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US 8,786,066 B2Granted
Die-stacking using through-silicon vias on bumpless build-up layer substrates including embedded-dice, and processes of forming same
AssigneeIntel Corporation
InventorsJohn S. Guzek, Ravi K. Nalla, Javier Soto Gonzalez, Drew Delaney, Suresh Pothukuchi, Mohit Mamodia, Edward Zarbock, Johanna M. Swan
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Abstract
An apparatus includes a coreless substrate with a through-silicon via (TSV) embedded die that is integral to the coreless substrate. The apparatus includes a subsequent die that is coupled to the TSV die and that is disposed above the coreless substrate.
Claims36
An apparatus, comprising:
- a die including a through-silicon via disposed therein (TSV die);
- wherein the TSV die is embedded in a first dielectric layer of a coreless substrate, wherein the coreless substrate includes a land side and a die side;
- wherein the TSV die includes an active surface and a backside surface;
- wherein the active surface is closer to the die side than to the land side;
- and wherein at least one trace disposed within the coreless substrate is connected to at least one die bond pad on the TSV die active surface through a filled via disposed within the first dielectric layer of the coreless substrate.
2 more elements
A computing system, comprising:
- a die including a through-silicon via disposed therein (TSV die);
- wherein the TSV die is embedded in a first dielectric layer of a coreless substrate, wherein the coreless substrate includes a land side and a die side;
- wherein the TSV die includes an active surface and a backside surface;
- wherein the active surface is closer to the die side than to the land side;
- and a foundation substrate coupled to the TSV die;
- and wherein at least one trace disposed within the coreless substrate is connected to at least one die bond pad on the TSV die active surface through a filled via disposed within the first dielectric layer of the coreless substrate.
3 more elements
Dependencies are inferred from the claim text.