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US 8,786,058 B2Granted
Semiconductor devices and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKyu-Hee Han, Byung-Lyul Park, Byunghee Kim, Sanghoon Ahn, Sangdon Nam, Kyoung-Hee Kim
Life of this patent
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Abstract
A semiconductor device is provided. The semiconductor device includes a substrate having a via hole comprised of a first region having a first width and a second region having a second width greater than the first width, wherein at least a portion of the substrate is exposed in the via hole, and an insulating region having an air gap spaced apart from and surrounding the first region of the via hole.
Claims14
A semiconductor device comprising:
- a semiconductor substrate having a via hole, the via hole comprising a first region having a first width and a second region having a second width greater than the first width;
- and
- an insulating region including an air gap surrounding and spaced apart from the first region of the via hole.
A semiconductor device comprising:
- a semiconductor substrate;
- a through silicon via extending from a first surface of the semiconductor substrate to a second surface of the semiconductor substrate opposite the first surface, wherein the through silicon via includes a first region having a first width and a second region having a second width greater than the first width;
- and
- an air gap surrounding and spaced apart from the first region of the through silicon via, wherein the air gap is positioned under the second region of the through silicon via.
1 more element
Dependencies are inferred from the claim text.