Semiconductor light emitting elements comprising a plating substrate with a projecting tab, or comprising an exposed seed layer

An apparatus comprising:

• a first electrode layer on at least one nitride semiconductor layer, wherein the first electrode layer includes a first electrode;
• a seed layer on the first electrode layer opposite to the nitride semiconductor layer;
• a plating substrate on the seed layer;
• and
• a second electrode layer disposed on the at least one nitride semiconductor layer, wherein the second electrode layer is located opposite of the first electrode,
• wherein the plating substrate includes at least one tab projecting from at least one side of the plating substrate in a plan view of the apparatus
• wherein an entirety of a surface of the latin substrate that faces the nitride semiconductor layer, including a surface of the at least one tab, is in a single plane.

An apparatus comprising:

• a first electrode layer disposed on at least one nitride semiconductor layer;
• a seed layer disposed on the first electrode layer;
• and
• a plating layer disposed on the seed layer opposite to the nitride semiconductor layer,
• wherein the nitride semiconductor layer includes a plurality of grooves formed in a longitudinal direction and a lateral direction,
• wherein the plating layer includes a plurality of plating substrates and a plurality of spaces,
• wherein the plating substrates are partially separated from one another by the spaces,
• wherein the plating substrates are partially connected to one another via a part of the plating layer disposed between the spaces, and
• wherein the seed layer is exposed at bottoms of the spaces.