Gallium-nitride-on-handle substrate materials and devices and method of manufacture
AssigneeSoraa, Inc.
InventorsMark P. D'Evelyn, Arpan Chakraborty, William Houck
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AssigneeSoraa, Inc.
InventorsMark P. D'Evelyn, Arpan Chakraborty, William Houck
Estimating the term…
A gallium and nitrogen containing substrate structure includes a handle substrate member having a first surface and a second surface and a transferred thickness of gallium and nitrogen material. The structure has a gallium and nitrogen containing active region grown overlying the transferred thickness and a recessed region formed within a portion of the handle substrate member. The substrate structure has a conductive material formed within the recessed region configured to transfer thermal energy from at least the transferred thickness of gallium and nitrogen material.
A gallium and nitrogen containing device comprising:
Dependencies are inferred from the claim text.