Semiconductor device with isolation layer, electronic device having the same, and method for fabricating the same
AssigneeSK hynix Inc.
InventorsHyung-Hwan Kim, Bong-Ho Choi, Jin-Yul Lee, Seung-Seok Pyo
Life of this patent
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Abstract
A semiconductor device with an isolation layer buried in a trench includes an interface layer formed on the surface of the trench, a buffer layer formed in the interface layer at a bottom corner of the trench, a liner layer formed over the interface layer, and a gap-fill layer gap-filling the trench over the liner layer. The trench includes a micro-trench formed at the bottom corner thereof, and the buffer layer fills the micro-trench.
Claims17
A semiconductor device with an isolation layer buried in a trench, comprising:
- an interface layer formed on the surface of the trench;
- a buffer layer formed in the interface layer at a bottom corner of the trench;
- a liner layer formed over the interface layer;
- and
- a gap-fill layer gap-filling the trench over the liner layer.
A semiconductor device, comprising:
- a first interface layer formed over the surface of a first trench;
- a first gap-fill layer gap-filling the first trench over the first interface layer;
- a second interface layer formed over the surface of a second trench of a substrate;
- a buffer layer formed in the second interface layer at a bottom corner of the second trench;
- a liner layer formed over the second interface layer;
- and
- a second gap-fill layer gap-filling the second trench over the liner layer.
A semiconductor device with an isolation layer buried in a trench, comprising:
- a first intermediate interface layer formed on the surface of the trench;
- a buffer layer formed on the first intermediate interface layer at a bottom corner of the trench;
- a second intermediate interface layer formed on the first intermediate interface layer and the buffer layer;
- a liner layer formed over the second intermediate interface layer;
- and
- a gap-fill layer gap-filling the trench over the liner layer.
An electronic device, comprising:
- an isolation layer comprising a trench formed in a substrate, an interface layer formed on the surface of the trench, a buffer layer formed in the interface layer at a bottom corner of the trench, a liner layer formed over the interface layer, and a gap-fill layer gap-filling the trench over the liner layer;
- and
- unit components isolated by the isolation layer.
An electronic device, comprising:
- a first isolation layer comprising a first interface layer formed on the surface of a first trench and a first gap-fill layer formed on the first interface layer and gap-filling the first trench;
- a second isolation layer comprising a second interface layer formed on the surface of a second trench, a buffer layer formed in the second interface layer at a bottom corner of the second trench, a liner layer formed on the second interface layer, and a second gap-fill layer gap-filling the second trench over the liner layer;
- and
- unit components isolated by the first and second isolations,
- wherein the second trench has a critical dimension (CD) greater than the first trench.
Dependencies are inferred from the claim text.