Power semiconductor devices having termination structures

An apparatus, comprising:

• a first conductive field plate;
• a second conductive field plate;
• a dielectric layer;
• and
• a plurality of pillars of a first conductivity type formed inside a termination region of a second conductivity type opposite the first conductivity type, the plurality of pillars defining a plurality of concentric rings disposed outside of an active area of a semiconductor device,
• the plurality of pillars including a first pillar coupled to the first conductive field plate and including a second pillar coupled to the second conductive field plate, the plurality of pillars including a third pillar isolated from the second conductive field plate by the dielectric layer, the dielectric layer being contiguous between the first pillar included in the plurality of pillars and the second pillar included in the plurality of pillars, the plurality of pillars being p-type pillars, the p-type pillars decreasing in charge with distance from the active area such that a net n-type balance charge is formed in at least a portion of the termination region.

A termination structure, comprising:

• a conductive field plate;
• a plurality of pillars of a first conductivity type inside a termination region of a second conductivity type opposite the first conductivity type, the plurality of pillars defining a plurality of concentric rings surrounding an active area of a semiconductor device;
• a dielectric layer, the plurality of pillars including a first pillar coupled to the conductive field plate and including a second pillar disposed between first pillar included in the plurality of pillars and a third pillar included in the plurality of pillars, the second pillar included in the plurality of pillars being isolated from the conductive field plate by the dielectric layer, the dielectric layer being contiguous between the first pillar included in the plurality of pillars and the third pillar included in the plurality of pillars;
• a first mesa region disposed between the first pillar included in the plurality of pillars and the second pillar included in the plurality of pillars;
• and
• a second mesa region disposed between the second pillar included in the plurality of pillars and the third pillar included in the plurality of pillars, the first mesa region having a width greater than a width of the second mesa region.