Photodetector with a plasmonic structure

A photo-detector capable of detecting electromagnetic radiation comprising:

• a doped semiconductor absorption layer for said radiation, capable of converting said radiation into charge carriers;
• a reflective layer that reflects the incident radiation that is not absorbed by the semiconductor layer towards the latter, located underneath said semiconductor layer;
• and a metallic structure placed on the semiconductor layer that forms, with said semiconductor layer, a surface plasmon resonator so as to concentrate the incident electromagnetic radiation on the metallic structure in field concentration zones of the semiconductor layer, wherein semiconductor zones for collecting charge carriers are oppositely doped to the doping of the semiconductor layer and are formed in said semiconductor layer in locations of the semiconductor layer that are devoid of field concentration zones and have a topology that complements that of the field concentration zones, and wherein it comprises, for each elementary detection surface of a detection array, a conductor that passes through the photo-detector from the reflective layer to at least one semiconductor collecting zone.