Metal nitride film, semiconductor device using the metal nitride film, and manufacturing method of semiconductor device

A manufacturing method of a semiconductor device comprising the steps of:

• forming a gate insulating film on a silicon substrate;
• forming a gate electrode on the gate insulating film;
• and
• annealing the formed gate electrode,
• wherein the step of forming the gate insulating film includes a step of forming a high permittivity insulating film including a metal oxide, a metal silicate, a metal oxide into which nitrogen is introduced, or a metal silicate into which nitrogen is introduced,
• the step of forming the gate electrode includes:
• a step of forming a metal-containing layer containing at least one selected from TiN, WN, and Si on the gate insulating film, the metal-containing layer not being a film composed of WSi;
• a step of forming a metal nitride layer containing Ti, Al, and N on the metal-containing layer;
• and a step of forming a silicon layer on the metal nitride layer, and
• a molar fraction of Ti, Al, and N of the metal nitride layer, expressed as (N/(Ti+Al+N)), is 0.53 or more a molar fraction of Ti, Al, and N of the metal nitride layer, expressed as (Ti/(Ti+Al+N)), is 0.32 or less;
• and a molar fraction of Ti, Al, and N of the metal nitride layer, expressed as (Al/(Ti+Al+N)), is 0.15 or less.