Semiconductor device and manufacturing method thereof
AssigneeRohm Co., Ltd.
InventorToshio Nakajima
Life of this patent
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Abstract
A semiconductor device includes a p-type semiconductor layer, n-type column regions formed of columnar thermal donors exhibiting an n-type property, a p-type column region interposed between the n-type column regions, the n-type column regions configured to form a super-junction structure in cooperation with the p-type column region, a channel region formed in the semiconductor layer, a source region formed in the channel region, a gate insulator film formed on the semiconductor layer, and a gate electrode formed on the gate insulator film and opposite to the channel region across the gate insulator film.
Claims8
A semiconductor device, comprising:
- a p-type semiconductor layer;
- n-type column regions arranged in a mutually spaced-apart relationship along a predetermined direction parallel to a front surface of the semiconductor layer, each of the n-type column regions formed of a plurality of columnar thermal donors exhibiting an n-type property;
- a p-type column region of the semiconductor layer interposed between the n-type column regions adjoining to each other, the n-type column regions configured to form a super-junction structure in the semiconductor layer in cooperation with the p-type column region;
- a channel region selectively formed in a front surface portion of the semiconductor layer to make up a portion of the front surface of the semiconductor layer;
- a source region selectively formed in a front surface portion of the channel region to make up a portion of the front surface of the semiconductor layer, a conductivity type of the source region being opposite to that of the channel region;
- a gate insulator film formed on the front surface of the semiconductor layer;
- and
- a gate electrode formed on the gate insulator film and opposite to the channel region across the gate insulator film.
Dependencies are inferred from the claim text.