Semiconductor device and method of fabricating the same

A semiconductor device comprising:

• a substrate;
• a gate metal layer;
• a first FIN field effect transistor (FINFET) comprising:
• a first source at the substrate;
• a first drain at the substrate;
• a first channel at the substrate, the first channel being interposed between the first source and the first drain;
• a first gate comprising a first portion of the gate metal layer;
• and
• a first gate oxide interposed between the first gate and the first channel;
• and
• a second FINFET comprising:
• a second source at the substrate;
• a second drain at the substrate;
• a second channel at the substrate, the second channel being interposed between the second source and the second drain;
• a second gate comprising a second portion of the gate metal layer;
• and
• a second gate oxide interposed between the second gate and the second channel;
• wherein the first gate comprises first dopants,
• wherein the second gate comprises at least one of:
• (a) second dopants different from the first dopants,
• (b) first dopants at a different concentration than a concentration of dopants of the first gate material, and
• (c) no dopants,
• wherein the first FINFET and the second FINFET are of the same conductivity type.

A semiconductor device comprising:

• a semiconductor substrate,
• a gate metal layer on the semiconductor substrate;
• a first FinFET comprising:
• a first source at the substrate;
• a first drain at the substrate;
• a first channel at the substrate, the first channel having a top surface and opposing side surfaces, the first channel being interposed between the first source and the first drain;
• a first gate oxide on the top surface of the first channel and on each of the opposing side surfaces of the first channel;
• and
• a first gate comprising a first portion of the gate metal layer on the first gate oxide at the top surface of the first channel and extending from one of the opposing side surfaces of the first channel to the other of the opposing side surfaces of the first channel;
• and
• a second FinFET comprising:
• a second source at the substrate;
• a second drain at the substrate;
• a second channel at the substrate, the second channel having a top surface and opposing side surfaces, the second channel being interposed between the second source and the second drain;
• a second gate oxide on the top surface of the second channel and on each of the opposing side surfaces of the second channel;
• and
• a second gate comprising a second portion of the gate metal layer on the second gate oxide at the top surface of the second channel and extending from one of the opposing side surfaces of the second channel to the other of the opposing side surfaces of the second channel,
• wherein the first gate comprises first dopants,
• wherein the second gate comprises at least one of:
• (a) second dopants different from the first dopants,
• (b) first dopants at a different concentration than a concentration of dopants of the first gate material, and
• (c) no dopants, and
• wherein the first FinFET and the second FinFET are of the same conductivity type.

A semiconductor device comprising:

• a substrate;
• a gate metal layer;
• a first FIN field effect transistor (FINFET) comprising:
• a first source at the substrate;
• a first drain at the substrate;
• a first channel at the substrate, the first channel being interposed between the first source and the first drain;
• a first gate comprising a first portion of the gate metal layer;
• and
• a first gate oxide interposed between the first gate and the first channel;
• and
• a second FINFET comprising:
• a second source at the substrate;
• a second drain at the substrate;
• a second channel at the substrate, the second channel being interposed between the second source and the second drain;
• a second gate comprising a second portion of the gate metal layer;
• and
• a second gate oxide interposed between the second gate and the second channel;
• wherein the first gate comprises first dopants,
• wherein the first FINFET and the second FINFET are of the same conductivity type,
• wherein the first FINFET and the second FINFET have different threshold voltage levels, and
• wherein the first FINFET and the second FINFET have a same channel length and a same channel width.