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US 8,786,022 B2Granted
Semiconductor device and semiconductor device manufacturing method
AssigneeFujitsu Semiconductor Limited
InventorsAkira Katakami, Takayuki Aoyama
Life of this patent
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Abstract
A semiconductor device includes a gate insulation film formed over a semiconductor substrate; a cap film formed over the gate insulation film; a silicon oxide film formed over the cap film; a metal gate electrode formed over the silicon oxide film; and source/drain diffused layers formed in the semiconductor substrate on both sides of the metal gate electrode.
Claims11
A semiconductor device comprising:
- a first gate insulation film that includes an oxide of Hf or an oxide of Zr, formed over a semiconductor substrate;
- a first cap film formed over the first gate insulation film, the first cap film including an oxide of a first material;
- a first silicon oxide film formed over the first cap film;
- a first metal gate electrode formed over the first silicon oxide film;
- first source/drain diffused layers formed in the semiconductor substrate on both sides of the first metal gate electrode and having a first conductive type;
- a second gate insulation film that includes an oxide of Hf or an oxide of Zr, formed over the semiconductor substrate;
- a second cap film formed over the second gate insulation film, the second cap film including the oxide of the first material;
- a second metal gate electrode formed directly on the second cap film;
- and
- second source/drain diffused layers formed in the semiconductor substrate on both sides of the second metal gate electrode and having a second conductive type.
7 more elements
A semiconductor device comprising
- a first gate insulation film formed over a semiconductor substrate;
- a first cap film formed over the first gate insulation film, the first cap film including an oxide of a first material;
- a first silicon oxide film formed over the first cap film;
- a first metal gate electrode formed over the first silicon oxide film;
- first source/drain diffused layers formed in the semiconductor substrate on both sides of the first metal gate electrode and having a first conductive type;
- a second gate insulation film formed over the semiconductor substrate;
- a second cap film formed over the second gate insulation film, the second cap film including the oxide of the first material;
- a second metal gate electrode formed directly on the second cap film;
- and
- second source/drain diffused layers formed in the semiconductor substrate on both sides of the second metal gate electrode and having a second conductive type,
- a second silicon oxide film formed between the semiconductor substrate and the first gate insulation film;
- and
- a third silicon oxide film formed between the semiconductor substrate and the second gate insulation film.
10 more elements
Dependencies are inferred from the claim text.