Method of fabricating a semiconductor device including a gate having a plurality of fingers extended over a plurality of isolation regions
AssigneeIntel Corporation
InventorMichael Andrew Smith
Life of this patent
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Abstract
Embodiments of the present invention describe a semiconductor device implementing the reduced-surface-field (RESURF) effect. The semiconductor device comprises a source/drain region having a plurality of isolation regions interleaved with source/drain extension regions. A gate electrode is formed on the semiconductor device, where the gate electrode includes gate finger elements formed over the isolation regions to induce capacitive coupling. The gate finger elements enhance the depletion of the source/drain extension regions, thus inducing a higher breakdown voltage.
Claims16
A semiconductor device comprising:
- a substrate having a channel region between a source region and a drain region;
- a first plurality of isolation regions that interleave a plurality of drain extension regions in the drain region;
- and
- a gate electrode having a first region formed over the channel region, a second region formed directly on a top surface of the first region, and a first plurality of finger elements formed over the first plurality of isolation regions, wherein each isolation region has at least one overlying finger element.
A method of forming a semiconductor device comprising:
- forming an insulating region on a substrate, the insulating region comprising a gate oxide region and a plurality of isolation regions in a source or a drain region;
- forming a first poly layer over the gate oxide region, the first poly layer having a plurality of gate finger elements extended over the plurality of isolation regions;
- depositing an insulating layer over the first poly layer;
- polishing the insulating layer so that the top surface of the insulating layer is substantially coplanar with the top surface of the first poly layer;
- and
- depositing a second poly layer over the first poly layer.
Dependencies are inferred from the claim text.