Strained Ge-on-insulator structure and method for forming the same

A strained Ge-on-insulator structure, comprising:

• a silicon substrate, wherein an oxide insulating layer is formed on a surface of the silicon substrate;
• a Ge layer formed on the oxide insulating layer, wherein a first passivation layer is directly formed on the oxide insulating layer, the Ge layer is directly formed on the first passivation layer, and the first passivation layer is a strontium germanide layer, a barium germanide layer, or a stannum germanide layer;
• a gate stack formed on the Ge layer, a channel region formed below the gate stack, and a source and a drain formed on sides of the channel region;
• and
• a plurality of shallow trench isolation structures extending into the silicon substrate and filled with an insulating dielectric material to produce a strain in the channel region.