Nonvolatile semiconductor memory device and method for manufacturing the same

A nonvolatile semiconductor memory device, comprising:

• a first stacked body having a plurality of electrode layers and a plurality of first insulating layers which are stacked alternately;
• a memory film provided on a side wall of a first hole penetrating the first stacked body in a stacking direction of the first stacked body;
• a first channel body layer provided inside the memory film provided in the first hole;
• an interlayer insulating film provided on the first stacked body;
• a second stacked body having a select gate electrode layer provided on the interlayer insulating film, and a second insulating layer provided on the select gate electrode layer;
• a gate insulating film provided on a side wall of a second hole communicating with the first hole and penetrating the second stacked body and the interlayer insulating film in a stacking direction of the second stacked body;
• and
• a second channel body layer provided inside the gate insulating film in the second hole, and connected to the first channel body layer,
• a first pore diameter of the second hole of the select gate electrode layer side in a first interface between the select gate electrode layer and the second insulating layer being smaller than a second pore diameter of the second hole of the select gate electrode layer side in a second interface between the select gate electrode layer and the interlayer insulating film.