Flash memory device having a graded composition, high dielectric constant gate insulator
AssigneeMicron Technology, Inc.
InventorsLeonard Forbes, Kie Y. Ahn
Life of this patent
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Abstract
A graded composition, high dielectric constant gate insulator is formed between a substrate and floating gate in a flash memory cell transistor. The gate insulator comprises amorphous germanium or a graded composition of germanium carbide and silicon carbide. If the composition of the gate insulator is closer to silicon carbide near the substrate, the electron barrier for hot electron injection will be lower. If the gate insulator is closer to the silicon carbide near the floating gate, the tunnel barrier can be lower at the floating gate.
Claims21
A memory cell, comprising:
- a semiconductor;
- a charge storage structure;
- a control gate;
- amorphous silicon carbide between the semiconductor and the charge storage structure;
- and
- a graded composition insulator material between the charge storage structure and the control gate.
A memory cell, comprising:
- a semiconductor substrate;
- a floating gate charge storage structure;
- a control gate;
- amorphous silicon carbide between the semiconductor substrate and the charge storage structure;
- and
- a graded composition insulator material between the charge storage structure and the control gate.
A memory cell, comprising:
- a semiconductor substrate;
- a floating gate charge storage structure;
- a control gate;
- a tunnel insulator comprising amorphous silicon carbide and germanium carbide between the semiconductor substrate and the charge storage structure;
- and
- a graded composition insulator material between the charge storage structure and the control gate.
Dependencies are inferred from the claim text.