Nonvolatile semiconductor memory device and method for manufacturing same

A method for manufacturing a nonvolatile semiconductor memory device, the device including a substrate, a memory unit provided on a major surface of the substrate, and a non-memory unit juxtaposed with the memory unit in a plane parallel to the major surface, the memory unit including a first stacked body, a first semiconductor layer, a first memory film, and a first conductive film, the first stacked body including a plurality of first electrode films and a first inter-electrode insulating film, the plurality of first electrode films being stacked along a first axis perpendicular to the major surface, the first inter-electrode insulating film being provided between two of the first electrode films mutually adjacent along the first axis, the first semiconductor layer being provided to oppose side surfaces of the plurality of first electrode films, the first memory film being provided between the first semiconductor layer and the plurality of first electrode films, the first conductive film being provided on the first stacked body apart from the first stacked body, the non-memory unit including a resistance element unit of the same layer as the first conductive film, the method comprising:

• forming a conductive film stacked body on the major surface, the conductive film stacked body including a plurality of conductive material films stacked along the first axis and an inter-layer insulating film provided between two of the conductive material films mutually adjacent along the first axis;
• forming a through-hole piercing the stacked body along the first axis in a first region of the conductive film stacked body used to form the memory unit;
• forming the first semiconductor layer extending in the through-hole along the first axis in the first region and forming the first memory film in the first region between the first semiconductor layer extending in the through-hole along the first axis and side surfaces of the plurality of conductive material films;
• and
• forming the resistance element unit in a second region of the conductive film stacked body used to form the non-memory unit in a portion of the conductive material film of the uppermost layer of the plurality of conductive material films.

A nonvolatile semiconductor memory device, comprising:

• a substrate;
• a memory unit provided on the substrate;
• and
• a non-memory unit provided on the substrate to be juxtaposed with the memory unit in a plane parallel to a major surface of the substrate,
• the memory unit including:
• a first stacked body including a plurality of first electrode films and a first inter-electrode insulating film, the plurality of first electrode films being stacked along a first axis perpendicular to the major surface, the first inter-electrode insulating film being provided between two of the first electrode films mutually adjacent along the first axis;
• a first semiconductor layer opposing side surfaces of the plurality of first electrode films;
• a first memory film provided between the first semiconductor layer and the plurality of first electrode films;
• a first conductive film provided on the first stacked body apart from the first stacked body;
• a second stacked body adjacent to the first stacked body in a second axis perpendicular to the first axis, the second stacked body including a plurality of second electrode films stacked in the first axis and a second inter-electrode insulating film provided between two of the second electrode films mutually adjacent along the first axis;
• a second conductive film provided on the second stacked body apart from the second stacked body;
• a second semiconductor layer piercing the second stacked body along the first axis;
• a second memory film provided between the second semiconductor layer and the plurality of second electrode films;
• and
• a semiconductor connection portion connecting one end of the first semiconductor layer to one end of the second semiconductor layer, and
• the non-memory unit including a resistance element unit of the same layer as the first conductive film.