US 8,786,000 B2 · Semiconductor device suppressing peeling of lower electrode of capacitor

Abstract

A method of manufacturing a semiconductor device includes: forming a core insulating film that includes first openings, on a semiconductor substrate; forming cylindrical lower electrodes that cover sides of the first openings with a conductive film; forming a support film that covers at least an upper surface of the core insulating film between the lower electrodes; forming a mask film in which an outside of a region where at least the lower electrodes are formed is removed, by using the support film; and performing isotropic etching on the core insulating film so as to leave the core insulating film at a part of an area between the lower electrodes, after the mask film is formed.

Claims10

Dependent claims

A semiconductor device, the device comprising:

a plurality of lower electrodes which are cylindrical;
a core insulating film that is provided at an area between parts of the plurality of lower electrodes;
a capacitance insulating film that covers inner walls of the plurality of lower electrodes, and outer walls of the plurality of lower electrodes except for the parts of the plurality of lower electrodes covered by the core insulating film;
and
an upper electrode that fills insides of the plurality of lower electrodes and gaps between the plurality of lower electrodes through the capacitance insulating film,
wherein a section in a stacking direction of the core insulating film has a mountain shape in which the bottom is wider than the top.

3 more elements

A semiconductor device comprising:

a base member including a semiconductor substrate;
a first and second conductive members formed on the base member, each of the first and second conductive members being electrically connected by the base member;
a first core insulating film being buried between the first and second conductive members so that an upper surface of the first core insulating film is arranged at intermediate level of a height of the first and second conductive members, the first core insulating film contacting with the side surface of the first and second conductive members and the base member;
a dielectric film covering the first and second conductive members and the first core insulating film, the dielectric film having greater dielectric-constant than the first core insulating film;
a conductive film formed between the first and second conductive members and on the first core insulating film via the dielectric film;
a third conductive member formed on the base member, the third conductive member being placed adjacently to the first conductive member, the third conductive member being electrically connected with the first and second conductive members by the base member;
and
a second core insulating film being buried between the first and third conductive members so that an upper surface of the second core insulating film is arranged at intermediate level of a height of the first and second conductive members, the second core insulating film contacting with the side surface of the first and third conductive members and the base member;
wherein the dielectric film further covers the third conductive member and the second core insulating film,
the conductive film is further formed between the first and third conductive members and on the second core insulating film via the dielectric film, and
the upper surface of the first core insulating film is arranged at different level from the upper surface of the second core insulating film.

8 more elements

Dependencies are inferred from the claim text.

Semiconductor device suppressing peeling of lower electrode of capacitor

Life of this patent

Semiconductor device suppressing peeling of lower electrode of capacitor

Life of this patent

Abstract

Claims10