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US 8,785,997 B2Granted
Semiconductor device including a silicate glass structure and method of manufacturing a semiconductor device
AssigneeInfineon Technologies AG
InventorsHans-Joachim Schulze, Alexander Susiti, Markus Zundel, Reinhard Ploss
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Abstract
A semiconductor device includes a semiconductor body including a first surface. The semiconductor device further includes a continuous silicate glass structure over the first surface. A first part of the continuous glass structure over an active area of the semiconductor body includes a first composition of dopants that differs from a second composition of dopants in a second part of the continuous glass structure over an area of the semiconductor body outside of the active area.
Claims15
A semiconductor device, comprising:
- a semiconductor body including a first surface;
- a continuous silicate glass structure over the first surface;
- and wherein
- a first part of the continuous glass structure over an active area of the semiconductor body includes a first composition of dopants that differs from a second composition of dopants in a second part of the continuous glass structure over an edge termination area of the semiconductor body outside of the active area;
- and wherein the active area comprises a source that is absent in the edge termination area.
2 more elements
Dependencies are inferred from the claim text.