Solid-state imaging element, manufacturing method, and electronic device
AssigneeSony Corporation
InventorTakashi Abe
Life of this patent
Estimating the term…
Abstract
A solid-state imaging element includes a pixel having a photoelectric conversion section and a side pinning layer. The photoelectric conversion section is formed in a semiconductor substrate. The side pinning layer is formed on a side of the photoelectric conversion section. The side pinning layer is formed by performing ion implantation in a state of a trench being open, the trench being formed in a part on a side of a region in which the photoelectric conversion section is formed.
Claims19
A solid-state imaging element comprising:
- a pixel including a photoelectric conversion section formed in a semiconductor substrate of a first conductivity type having a first impurity concentration;
- a side pinning layer formed on a side of the photoelectric conversion section, wherein the side pinning layer is formed of the first conductivity type having a higher impurity concentration than the first impurity concentration;
- and
- an anode of the photoelectric conversion section comprising a pixel separating section surrounding sides of the photoelectric conversion section, wherein the pixel separating section comprises at least two sides in contact with the semiconductor substrate of the first conductivity type having the first impurity concentration, and wherein a negative potential is supplied to the anode of the photoelectric conversion section.
A method for manufacturing a solid-state imaging element including a pixel comprising:
- forming a trench in a semiconductor substrate of a first conductivity type having a first impurity concentration;
- forming a photoelectric conversion section in the semiconductor substrate;
- forming a side pinning layer on a side of the photoelectric conversion section, wherein the side pinning layer is formed of the first conductivity type having a higher impurity concentration than the first impurity concentration;
- forming a surface pinning layer on a surface side of the photoelectric conversion section;
- forming an anode of the photoelectric conversion section, wherein the anode comprises a pixel separating section formed in the trench and surrounding sides of the photoelectric conversion section the pixel separating section comprising at least two sides in contact with the semiconductor substrate of the first conductivity type having the first impurity concentration;
- and
- connecting an anode of the photoelectric conversion section to a signal wiring such that a negative potential is supplied to the photoelectric conversion section.
An electronic device comprising:
- a solid-state imaging element including a pixel having a photoelectric conversion section formed in a semiconductor substrate of a first conductivity type having a first impurity concentration;
- a side pinning layer formed on a side of the photoelectric conversion section, wherein the side pinning layer is formed of the first conductivity type having a higher impurity concentration than the first impurity concentration;
- and
- an anode of the photoelectric conversion section comprising a pixel separating section surrounding sides of the photoelectric conversion section, wherein the pixel separating section comprises at least two sides in contact with the semiconductor substrate of the first conductivity type having the first impurity concentration, and wherein a negative potential is supplied to the anode of the photoelectric conversion section.
Dependencies are inferred from the claim text.