US 8,785,987 B2Granted

IGFET device having an RF capability

AssigneeACCO Corporation

InventorDenis Masliah

Life of this patent

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Abstract

An IGFET device includes: —a semiconductor body having a major surface, —a source region of first conductivity type abutting the surface, —a drain region of the first conductivity-type abutting the surface and spaced from the source region with a channel therefrom, —an active gate overlying the channel and insulated from the channel by a first dielectric material forming the gate oxide of the IGFET device, —a dummy gate positioned between the active gate and the drain and insulated from the active gate by a second dielectric material so that a capacitance is formed between the active gate and the dummy gate, and insulated from the drain region by the gate oxide, wherein the active gate and the dummy gate are forming the electrodes of the capacitance substantially perpendicular to the surface.

Claims7

Dependent claims

An IGFET device comprising:

a substrate;
two field oxide regions defined in the substrate and defining a device region therebetween;
a source region defined in the substrate within the device region;
a drain region also defined in the substrate within the device region and spaced from the source region by a channel region;
a first dielectric layer disposed on the substrate within a span of the device region;
an active gate insulated from the channel region by the first dielectric layer;
a dummy gate disposed on the first dielectric layer;
and
a second dielectric material insulating the active gate from the dummy gate, the second dielectric material completely covering an entire top surface of the dummy gate, and the second dielectric material including an opening disposed therethrough to the active gate, the second dielectric material extending uninterrupted from the active gate to the dummy gate;
and wherein the dummy gate, the active gate, and the second dielectric material disposed therebetween define a capacitor.

7 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/189,342Filed 22 Jul 2011 · continuation
Published: US 2011/0278675 A117 Nov 2011
Granted: 22 Jul 2014
Term ends: Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10D 30/0221
Of FETs having insulated gates [IGFET]: having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or…
H10D 30/60
Field-effect transistors [FET]: insulated-gate field-effect transistors [IGFET]
H10D 30/603
Having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs: having asymmetry in the channel direction, e.g. lateral…
H10D 64/111
Electrodes of devices having potential barriers: field plates

Family

PCT/IB2005/003029Parent of this continuation · filed 12 Oct 2005
US 2011/0278675 A1Pre-grant publication · published 17 Nov 2011
Application12/089,711Parent of this continuation
US 8,008,731 B2Parent of this continuation
US 2008/0224233 A1Published application
US 8,785,987 B2This patent

From the US filing history. Foreign family members aren’t listed.

Timeline

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