BCMD image sensor with junction gate for back side or front side illumination

A BCMD image sensor pixel array, comprising:

• a plurality of pixel circuits, wherein each pixel circuit of the array comprises:
• a BCMD transistor formed near the surface of a silicon substrate, wherein said BCMD transistor includes a junction gate, wherein charge reset is accomplished in a vertical direction to the junction gate, wherein said junction gate also serves as a drain for any overflow charge, whereby a built in anti-blooming capability is provided, and wherein said pixel is configured to be responsive to illumination from the front side of the silicon substrate;
• peripheral circuitry;
• and
• a pinned photodiode interfacing with the BCMD transistor with a junction gate, wherein charge generated from said front side illumination is stored in said pinned photodiode;
• said stored charge thereafter being transferred into a BCMD charge storage well, whereby a global shutter mode of operation may be implemented.

A BCMD image sensor pixel array, comprising:

• a plurality of pixel circuits, wherein each pixel circuit of the array comprises:
• a BCMD transistor formed near the surface of a silicon substrate, wherein said BCMD transistor includes a junction gate, wherein charge reset is accomplished in a vertical direction to the junction gate, wherein said junction gate also serves as a drain for any overflow charge, whereby a built in anti-blooming capability is provided, and wherein said pixel is configured to be responsive to illumination from the front side of the silicon substrate;
• peripheral circuitry;
• and
• a plurality of pinned photodiodes interfacing with said BCMD transistor with a junction gate, said pinned photodiodes being responsive to front side illumination and having a capability to store charge therein;
• said charge stored in said plurality of pinned photodiodes being transferred by into a BCMD charge storage well, whereby a global shutter mode of operation may be implemented.