High speed SiGe HBT and manufacturing method thereof

A high-speed SiGe HBT, comprising:

• a substrate;
• shallow trench isolations formed in the substrate;
• a collector region formed beneath a surface of the substrate and located between the shallow trench isolations;
• an epitaxial dielectric layer including two portions, a first one of the portions being located on the collector region, a second one of the portions being located on one of the shallow trench isolations;
• a base region formed both in a region between the two portions of the epitaxial dielectric layer and on surfaces of the two portions of the epitaxial dielectric layer;
• an emitter dielectric layer including two portions, both portions being formed on the base region;
• an emitter region formed both in a region between the two portions of the emitter dielectric layer and on surfaces of the two portions of the emitter dielectric layer;
• and
• a contact hole, formed on a surface of each of the base region, the emitter region and the collector region.