Polarization super-junction low-loss gallium nitride semiconductor device

A semiconductor device, comprising:

• an InzGa1-zN layer, where 0≦z<1,
• an AlxGa1-xN layer, where 0<x<1, on the InzGa1-zN layer,
• an InyGa1-yN layer, where 0≦y<1, on the AlxGa1-xN layer;
• and
• a p-type InwGa1-wN layer, where 0≦w<1, on the InyGa1-yN layer,
• a two-dimensional hole gas being formed in the InyGa1-yN layer in the vicinity part of a hetero-interface between the AlxGa1-xN layer and the InyGa1-yN layer, and a two-dimensional electron gas being formed in the InzGa1-zN layer in the vicinity part of a hetero-interface between the InzGa1-zN layer and the AlxGa1-xN layer at a non-operating time,
• wherein when the density of the two-dimensional hole gas is expressed as Ps and its unit is the cm−2, the density of the two-dimensional electron gas is expressed as Ns and its unit is the cm−2, and the thickness of the AlxGa1-xN layer is expressed as t and its unit is the cm, x, y, z, and t satisfy the following equations:
• Ps=b1x+b2y−b3/t≧5×1012
• Ns=b1x+b2z−b3/t≧5×1012
• b1=5.66×1013 (cm−2)
• b2=9.81×1013 (cm−2)
• b3=1.89×107 (cm−1).

A semiconductor device, comprising:

• an InzGa1-zN layer, where 0≦z<1,
• an AlxGa1-xN layer, where 0<x<1, on the InzGa1-zN layer,
• an InyGa1-yN layer, where 0≦y<1, on the AlxGa1-xN layer;
• and
• a p-type InwGa1-wN layer, where 0≦w<1, on the InyGa1-yN layer,
• a two-dimensional hole gas being formed in the InyGa1-yN layer in the vicinity part of a hetero-interface between the AlxGa1-xN layer and the InyGa1-yN layer, and a two-dimensional electron gas being formed in the InzGa1-zN layer in the vicinity part of a hetero-interface between the InzGa1-zN layer and the AlxGa1-xN layer at a non-operating time,
• wherein when the density of the two-dimensional hole gas is expressed as Ps and its unit is the cm−2, the density of the two-dimensional electron gas is expressed as Ns and its unit is the cm−2, and the thickness of the AlxGa1-xN layer is expressed as t and its unit is the cm, x, y, z, and t satisfy the following equations:
• Ps=b1x+b2y−b3/t≧2×1012
• Ns=b1x+b2z−b3/t≧2×1012
• b1=5.66×1013 (cm−2)
• b2=9.81×1013 (cm−2)
• b3=1.89×107 (cm−1),
• wherein when the thickness of the InyGa1-yN layer is expressed as q, the thickness of the p-type InwGa1-wN layer is expressed as r, the concentration of the p-type impurity of the p-type InwGa1-wN layer is expressed as NA, and the concentration of the n-type impurity of the AlxGa1-xN layer is expressed as ND, the following inequalities are satisfied:
• x>0.08
• t>15 nm
• q>0 nm
• r>8.0 nm
• NA>1×1016 cm−3
• ND<4×1018 cm−3.

A semiconductor device, comprising:

• an InzGa1-zN layer, where 0≦z<1,
• an AlxGa1-xN layer, where 0<x<1, on the InzGa1-zN layer,
• an InyGa1-yN layer, where 0≦y<1, on the AlxGa1-xN layer;
• and
• a p-type InwGa1-wN layer, where 0≦w<1, on the InyGa1-yN layer,
• a two-dimensional hole gas being formed in the InyGa1-yN layer in the vicinity part of a hetero-interface between the AlxGa1-xN layer and the InyGa1-yN layer, and a two-dimensional electron gas being formed in the InzGa1-zN layer in the vicinity part of a hetero-interface between the InzGa1-zN layer and the AlxGa1-xN layer at a non-operating time,
• wherein when the density of the two-dimensional hole gas is expressed as Ps and its unit is the cm−2, the density of the two-dimensional electron gas is expressed as Ns and its unit is the cm−2, and the thickness of the AlxGa1-xN layer is expressed as t and its unit is the cm, x, y, z, and t satisfy the following equations:
• Ps=b1x+b2y−b3/t≧2×1012
• Ns=b1x+b2z−b3/t≧2×1012
• b1=5.66×1013 (cm−2)
• b2=9.81×1013 (cm−2)
• b3=1.89×107 (cm−1),
• wherein when the thickness of the InyGa1-yN layer is expressed as q, the thickness of the p-type InwGa1-wN layer is expressed as r, the concentration of the p-type impurity of the p-type InwGa1-wN layer is expressed as NA, and the concentration of the n-type impurity of the AlxGa1-xN layer is expressed as ND, the following inequalities are satisfied:
• x>0.13
• t>25 nm
• q>1 nm
• r>10 nm
• NA>8×1017 cm−3
• ND<3×1018 cm−3.

A semiconductor device, comprising:

• an InzGa1-zN layer, where 0≦z<1,
• an AlxGa1-xN layer, where 0<x<1, on the InzGa1-zN layer,
• an InyGa1-yN layer, where 0≦y<1, on the AlxGa1-xN layer;
• and
• a p-type InwGa1-wN layer, where 0≦w<1, on the InyGa1-yN layer,
• a two-dimensional hole gas being formed in the InyGa1-yN layer in the vicinity part of a hetero-interface between the AlxGa1-xN layer and the InyGa1-yN layer, and a two-dimensional electron gas being formed in the InzGa1-zN layer in the vicinity part of a hetero-interface between the InzGa1-zN layer and the AlxGa1-xN layer at a non-operating time,
• wherein when the density of the two-dimensional hole gas is expressed as Ps and its unit is the cm−2, the density of the two-dimensional electron gas is expressed as Ns and its unit is the cm−2, and the thickness of the AlxGa1-xN layer is expressed as t and its unit is the cm, x, y, z, and t satisfy the following equations:
• Ps=b1x+b2y−b3/t≧2×1012
• Ns=b1x+b2z−b3/t≧2×1012
• b1=5.66×1013 (cm−2)
• b2=9.81×1013 (cm−2)
• b3=1.89×107 (cm−1),
• wherein the semiconductor device is a diode, a mesa is formed at least in the InyGa1-yN layer and the p-type InwGa1-wN layer, an anode electrode is contacting the p-type InwGa1-wN layer of one end part of the mesa, and a cathode electrode on the AlxGa1-xN layer on the other end part of the mesa.