Semiconductor electrostatic protection circuit device

A semiconductor electrostatic protection circuit device, comprising:

• a first first-conductivity type well extending in a first direction over a semiconductor substrate of the semiconductor electrostatic protection circuit device, the first first-conductivity type well having a first long side and a second long side opposite the first long side;
• a plurality of second first-conductivity type wells extending in a second direction over the semiconductor substrate and perpendicular to the first direction with one end of each of the plurality of second first-conductivity type wells coupled to the second long side of the first first-conductivity type well;
• a second-conductivity type well formed over the substrate and enclosing the first first-conductivity type well and the second first-conductivity type wells;
• a plurality of first high-concentration second-conductivity type regions each extending in the second direction on a surface of each of the plurality of second first-conductivity type wells;
• a plurality of first high-concentration first-conductivity type regions extending in the second direction on a surface of the second-conductivity type well with each of the first high-concentration second-conductivity type regions being located next to at least one of the first high-concentration first-conductivity type regions;
• and
• a second high-concentration first-conductivity type region extending in the first direction as a first trigger tap region on a surface of the first first-conductivity type well.

A semiconductor electrostatic protection circuit device, comprising:

• a first first-conductivity type well extending in a first direction over a semiconductor substrate of the semiconductor electrostatic protection circuit device, the first first-conductivity type well having a first long side and a second long side opposite the first long side;
• a plurality of first high-concentration second-conductivity type regions extending in a second direction perpendicular to the first direction over the semiconductor substrate;
• a plurality of first high-concentration first-conductivity type regions extending in the second direction over the semiconductor substrate and facing at least one of the plurality of first high-concentration second-conductivity type regions;
• a second high-concentration first-conductivity type region extending in the first direction as a first trigger tap region on a surface of the first first-conductivity type well;
• and
• a second-conductivity type well formed over the substrate and enclosing the first first-conductivity type well and also the first high-concentration first-conductivity type regions;
• wherein the electrostatic protection circuit device has a layout such that each of the first high-concentration second conductivity type regions has:
• a long side which faces a long side of at least one of the first high-concentration first-conductivity type regions;
• and
• a short side which faces a long side of the second high-concentration first-conductivity type region serving as the first trigger tap region.