Loading patent…
AssigneeInternational Business Machines Corporation
InventorsDaniel Christopher Worledge, Vladislav Korenivski
Estimating the term…
Magnetic tunnel junction transistor devices and methods for operating and forming magnetic tunnel junction transistor devices. In one aspect, a magnetic tunnel junction transistor device includes a first source/drain electrode, a second source/drain electrode, a gate electrode, and a magnetic tunnel junction disposed between the gate electrode and the second source/drain electrode. The magnetic tunnel junction includes a magnetic free layer that extends along a length of the gate electrode toward the first source/drain electrode such that an end portion of the magnetic free layer is disposed between the gate electrode and the first source/drain electrode. The magnetic tunnel junction transistor device switches a magnetization orientation of the magnetic free layer by application of a gate voltage to the gate electrode, thereby changing a resistance between the first and second source/drain electrodes through the magnetic free layer.
A magnetic tunnel junction transistor device, comprising:
A magnetic tunnel junction transistor device comprising:
A method for operating a magnetic tunnel junction transistor device having a first source/drain electrode, a second source/drain electrode, a gate electrode, and a magnetic tunnel junction disposed between the gate electrode and the second source/drain electrode, wherein the magnetic tunnel junction comprises a magnetic free layer that extends along a length of the gate electrode toward the first source/drain electrode such that an end portion of the magnetic free layer is disposed between the gate electrode and the first source/drain electrode, the method comprising:
A semiconductor integrated circuit, comprising a plurality of magnetic tunnel junction transistor devices formed on a bulk substrate, each of the magnetic tunnel junction transistor devices comprising:
Dependencies are inferred from the claim text.