Nitride-based semiconductor light-emitting device and method for fabricating the same

A nitride-based semiconductor light-emitting device having a nitride-based semiconductor multilayer structure,

• wherein the nitride-based semiconductor multilayer structure comprises:
• an active layer including an AlaInbGacN crystal layer (where a+b+c=1, a≧1, b≧0 and c≧0);
• an overflow suppressing layer;
• and
• an AlfGagN layer (where f+g=1, f≧0, and g≧0),
• wherein the overflow suppressing layer is arranged between the active layer and the AlfGagN layer,
• a portion of the overflow suppressing layer is obtained by doping AldGaeN (where d+e=1, d>0, e≧0, and f<d) with In at a concentration of 1×1016 atoms/cm3 to 8×1018 atoms/cm3,
• an In concentration of the overflow suppressing layer other than the portion of the overflow suppressing layer is less than 1×1016 atoms/cm3,
• peak of the concentration of In with which the AldGaeN is doped is within the overflow suppressing layer, and
• the peak of the concentration of In is not at a face of the overflow suppressing layer.