Method of manufacturing semiconductor light emitting device

A light emitting device comprising:

• a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer;
• an electrode layer on the light emitting structure;
• a conductive support member on the electrode layer;
• and
• a channel layer on an outer peripheral portion of the second conductive semiconductor layer of the light emitting structure,
• wherein the conductive support member includes a first portion and a second portion,
• wherein the first portion is protruded downwardly from the second portion,
• wherein an area of a top surface of the electrode layer is greater than an area of a top surface of the second conductive semiconductor layer,
• wherein a width of the electrode layer is greater than a width of the second conductive semiconductor layer,
• wherein the channel layer is exposed from a side of the light emitting structure, and
• wherein a portion of the electrode layer is disposed between the channel layer and the conductive support member.

A light emitting device comprising:

• a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer;
• an electrode layer on the light emitting structure;
• a conductive support member on the electrode layer;
• and
• a channel layer on an outer peripheral portion of the second conductive semiconductor layer of the light emitting structure,
• wherein the channel layer includes at least one selected from the group consisting of ITO, IZO, AZO, IZTO, IAZO, IGZO, IGTO, and ATO,
• wherein a width of the electrode layer is greater than a width of the second conductive semiconductor layer,
• wherein the channel layer is exposed from a side of the light emitting structure, and
• wherein a portion of the electrode layer is disposed between the channel layer and the conductive support member.