Light emitting apparatus and method for manufacturing the same

A light emitting device comprising:

• an organic insulation layer over an end of a first electrode;
• an inorganic insulation layer over an upper surface and a side surface of the organic insulation layer, the inorganic insulation layer having an opening over the first electrode;
• a light emitting layer comprising an organic material over the first electrode and the inorganic insulation layer;
• a second electrode over the light emitting layer;
• and
• a transistor electrically connected to the first electrode,
• wherein the inorganic insulation layer comprises silicon nitride having hydrogen concentration of 1×1021 atoms/cm3 or less.

A light emitting device comprising:

• an organic insulation layer over an end of a first electrode;
• an inorganic insulation layer over an upper surface and a side surface of the organic insulation layer, the inorganic insulation layer having an opening over the first electrode;
• a light emitting layer comprising an organic material over the first electrode and the inorganic insulation layer;
• and
• a second electrode over the light emitting layer,
• wherein the side surface of the organic insulation layer is an inclined surface having a curvature.

A light emitting device comprising:

• an organic insulation layer over an end of a first electrode;
• an inorganic insulation layer over an upper surface and a side surface of the organic insulation layer, the inorganic insulation layer having an opening over the first electrode;
• a light emitting layer comprising an organic material over the first electrode and the inorganic insulation layer;
• a second electrode over the light emitting layer;
• and
• a transistor electrically connected to the first electrode,
• wherein the side surface of the organic insulation layer is an inclined surface having a curvature.

A light emitting device, comprising:

• a first inorganic insulation layer over and in contact with an anode layer;
• a light emitting layer comprising an organic material overlapping with the anode layer and the first inorganic insulation layer;
• a cathode layer over and in contact with the light emitting layer;
• and
• a second inorganic insulation layer over the cathode layer,
• wherein at least one of the first inorganic insulation layer and the second inorganic insulation layer is a silicon nitride layer having hydrogen concentration of 1×1021 atoms/cm3 or less.