SiC bipolar junction transistor with overgrown emitter

A silicon carbide (SiC) bipolar junction transistor (BJT), comprising:

• a first region having a first conductivity type;
• a second region having a second conductivity type opposite the first conductivity type;
• and
• a third region having the first conductivity type,
• the first region, the second region and the third region being arranged as a stack such that the second region is disposed between the first region and the third region, the third region defining an elevated structure defined by an outer sidewall, the second region having a portion interfacing the third region and defining an active region of the second region, the active region including a first portion laterally spaced away from the outer sidewall of the third region by a second portion having a dopant dose higher than that of the first portion.

A silicon carbide (SiC) bipolar junction transistor (BJT), comprising:

• a collector region;
• a base region;
• and
• an emitter region disposed on the base region, the emitter region defining an elevated structure defined by an outer sidewall, the base region having an intrinsic base region being capped by the emitter region,
• the intrinsic base region having a first portion with a dopant dose higher than a dopant dose of a second portion, the first portion and the second portion defining an interface disposed below the emitter region and laterally spaced away from the outer sidewall of the emitter region.

An apparatus, comprising:

• a collector region;
• a base region;
• and
• an emitter region, the base region being disposed between the collector region and the emitter region, the collector region, the base region and the emitter region including silicon carbide (SiC), the emitter region having a portion disposed above a top surface of the base region, the base region having a recessed portion interfacing the emitter region and disposed below the top surface of the base region,
• the recessed portion of the base region having a width narrower than a width of the portion of the emitter region disposed above the top surface of the base region, the base region having a portion laterally extending from the recessed portion toward a contact zone of the base region, the portion of the base region having a doping concentration higher than the doping concentration of the recessed portion of the base region.