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US 8,785,944 B2Granted
High electron mobility transistor
AssigneeSamsung Electronics Co., Ltd.
InventorsIn-jun Hwang, Jae-joon Oh, Jae-won Lee, Hyo-ji Choi, Jong-bong Ha
Life of this patent
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Abstract
A high electron mobility transistor (HEMT) according to example embodiments includes a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a reverse diode gate structure on the second semiconductor layer. A source and a drain may be on at least one of the first semiconductor layer and the second semiconductor layer. A gate electrode may be on the reverse diode gate structure.
Claims38
A high electron mobility transistor comprising:
- a substrate;
- a first semiconductor layer on the substrate;
- a second semiconductor layer on the first semiconductor layer;
- a source and a drain on at least one of the first semiconductor layer and the second semiconductor layer;
- and
- a gate structure between the source and the drain,
- the gate structure including a reverse diode gate structure and a gate electrode,
- wherein the reverse diode gate structure includes a first layer, and a second layer on the first layer, and
- the second layer is doped with a p-type dopant at a concentration lower than a concentration of p-type dopant in the first layer.
6 more elements
A high electron mobility transistor comprising:
- a substrate;
- a first semiconductor layer on the substrate;
- a second semiconductor layer on the first semiconductor layer;
- a source and a drain on at least one of the first semiconductor layer and the second semiconductor layer;
- and
- a gate structure between the source and the drain,
- the gate structure including a reverse diode gate structure and a gate electrode,
- wherein an upper surface of the second semiconductor layer defines a recess.
5 more elements
A high electron mobility transistor comprising:
- a substrate;
- a first semiconductor layer on the substrate;
- a second semiconductor layer on the first semiconductor layer;
- a source and a drain on at least one of the first semiconductor layer and the second semiconductor layer;
- and
- a gate structure between the source and the drain,
- the gate structure including a reverse diode gate structure and a gate electrode,
- wherein the reverse diode gate structure includes a first layer and a second layer on the first layer,
- the first layer includes a p-type group III nitride semiconductor,
- wherein the second layer includes:
- an undoped group III nitride semiconductor.
8 more elements
A high electron mobility transistor comprising:
- a substrate;
- a first semiconductor layer on the substrate;
- a second semiconductor layer on the first semiconductor layer;
- a source and a drain on at least one of the first semiconductor layer and the second semiconductor layer;
- and
- a gate structure between the source and the drain,
- the gate structure including a reverse diode gate structure and a gate electrode,
- wherein the reverse diode gate structure includes a first layer, and
- wherein the first layer directly contacts the source.
6 more elements
A high electron mobility transistor comprising:
- a substrate;
- a first semiconductor layer on the substrate;
- a second semiconductor layer on the first semiconductor layer;
- a source and a drain on at least one of the first semiconductor layer and the second semiconductor layer;
- and
- a gate structure between the source and the drain,
- the gate structure including a reverse diode gate structure and a gate electrode,
- wherein the reverse diode gate structure includes a first layer, and
- wherein the gate electrode comprises a metal having a work function of less than or equal to 4.5 eV.
6 more elements
A high electron mobility transistor comprising:
- a substrate;
- a first semiconductor layer on the substrate;
- a second semiconductor layer on the first semiconductor layer;
- a source and a drain on at least one of the first semiconductor layer and the second semiconductor layer;
- and
- a gate structure between the source and the drain,
- the gate structure including a reverse diode gate structure and a gate electrode,
- wherein the gate electrode includes at least one of W, Hf, and Al.
5 more elements
A high electron mobility transistor comprising:
- a substrate;
- a first semiconductor layer on the substrate;
- a second semiconductor layer on the first semiconductor layer;
- a source and a drain on at least one the first semiconductor layer and the second semiconductor layer;
- and
- a gate structure between the source and the drain,
- the gate structure includes a gate electrode and a depletion layer connected to the source.
4 more elements
A high electron mobility transistor comprising:
- a first semiconductor layer;
- a second semiconductor layer on the first semiconductor layer;
- a first electrode, a second electrode, and a third electrode spaced apart on at least one of the first semiconductor layer and the second semiconductor layer,
- the second electrode being on a depletion structure and
- the depletion structure is spaced part from the third electrode,
- wherein the depletion structure does not include a n-type semiconductor.
3 more elements
A high electron mobility transistor comprising:
- a first semiconductor layer;
- a second semiconductor layer on the first semiconductor layer;
- a first electrode, a second electrode, and a third electrode spaced apart on at least one of the first semiconductor layer and the second semiconductor layer,
- the second electrode being on a reverse diode structure, wherein
- the reverse diode structure includes a first layer including a group III nitride semiconductor doped with a p-type dopant,
- the first layer directly contacts the first electrode,
- the reverse diode structure includes a second layer on the first layer, and
- the second layer includes one of,
- a group III nitride semiconductor doped with an n-type dopant,
- an undoped group III nitride semiconductor, and
- a group III nitride semiconductor doped with a p-type dopant at a concentration lower than a p-type dopant concentration in the first layer.
8 more elements
A high electron mobility transistor comprising:
- a first semiconductor layer;
- a second semiconductor layer on the first semiconductor layer;
- a first electrode, a second electrode, and a third electrode spaced apart on at least one of the first semiconductor layer and the second semiconductor layer,
- the second electrode being on one of a depletion structure and a reverse diode structure,
- wherein, if the one of the depletion structure and the reverse diode structure is the depletion structure,
- an insulating layer is not between opposing surfaces of the second electrode and the depletion structure, and
- the depletion structure is spaced part from the third electrode,
- wherein an upper surface of the second semiconductor layer defines a recess.
5 more elements
Dependencies are inferred from the claim text.